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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJW21191 DESCRIPTION *DC Current Gain *High Area of Safe Operation APPLICATIONS *Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -150 UNIT Collector Current-Continuous Collector Current-Pulsed Base Current-Continuous PD Tj Tstg Total Power Dissipation (TC=25) Junction Temperature Storage Temperature w w PARAMETER scs .i w -5 -8 -16 -2 100 150 -65~150 -150 .cn mi e V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C VALUE 0.65 UNIT /W ThermalResistance Junction To Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEs IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC=-10mA; IB=0 IC=-4A ;IB=-0.4A B MJW21191 MIN -150 TYP. MAX UNIT V -1.0 -2.0 -2 -10 -10 100 V V V A A IC=-8A ;IB=-1.6A B IC=-4A ; VCE=-2V VCE= -250V; IE=0 VEB=-5V; IC=0 IC=-4A; VCE=-2V Current Gain-Bandwidth Product w w scs .i w IC=-8A; VCE=-2V IC=-1A ;VCE=-10V; ftest=1MHz .cn mi e 15 5 4 MHz isc Websitewww.iscsemi.cn 2 |
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